Method of manufacturing semiconductor device and semiconductor device

ABSTRACT

A method of manufacturing a semiconductor device includes embedding electrodes in insulating layers exposed to the joint surfaces of a first substrate and a second substrate, subjecting the joint surfaces of the first substrate and the second substrate to chemical mechanical polishing, to form the electrodes into recesses recessed as compared to the insulating layer, laminating insulating films of a uniform thickness over the entire joint surfaces, forming an opening by etching in at least part of the insulating films covering the electrodes of the first substrate and the second substrate, causing the corresponding electrodes to face each other and joining the joint surfaces of the first substrate and the second substrate to each other, heating the first substrate and the second substrate joined to each other, causing the electrode material to expand and project through the openings, and joining the corresponding electrodes to each other.

CROSS REFERENCE TO RELATED APPLICATIONS

This application is a continuation application of U.S. patentapplication Ser. No. 16/611,554, filed on Nov. 7, 2019, which is U.S.National Phase of International Patent Application No. PCT/JP2018/017402filed on May 1, 2018, which claims priority benefit of Japanese PatentApplication No. JP 2017-096922 filed in the Japan Patent Office on May16, 2017. Each of the above-referenced applications is herebyincorporated herein by reference in its entirety.

TECHNICAL FIELD

The present technology relates to a method of manufacturing asemiconductor device and a semiconductor device.

BACKGROUND ART

There are chip lamination techniques such as chip-on-chip, chip-on-waferand wafer-on-wafer, in which substrates formed with semiconductorelements or integrated circuits are joined to each other to achievethree-dimensional lamination. Use of the chip lamination techniquereduces the area occupied by a semiconductor device. In addition, thenumber of chips which can be produced from a single sheet ofsemiconductor wafer is increased, contributing to improved yield.

On joint surfaces of the substrates to be laminated together by the chiplamination technique, electrodes which can be electrically connected aredisposed at positions where the joint surfaces face each other. Thesubstrates to be laminated together are subjected, before bonding, topolishing or grinding of the joint surfaces by chemical mechanicalpolishing technique to planarize the joint surfaces.

Here, the chemical mechanical polishing technique involves polishingselection ratio, and, depending on the selection of abrasive and apolishing cloth to be used, it is possible that a difference inpolishing rate occurs between the structures constituting the jointsurfaces. Specifically, if an electrode section is higher in polishingrate than the surrounding structure, the electrode section is formedinto a recessed shape, whereas if the electrode section is lower inpolishing rate than the surrounding structure, the electrode section isformed into a projected shape.

In the case where the electrode section is formed into a recessed shape,it is possible for the electrical connection between the electrodesexposed to the joint surfaces to become insufficient. On the other hand,in the case where the electrode section is formed into a projectedshape, it is possible for the metallic material of the projectingelectrodes to be crushed and extended at the time of joining, leading toformation of unintended electrical connection with the adjacentelectrodes.

PTL 1 proposes a method in which, for solving the problem in the casewhere the electrode section is formed into a recessed shape, films ofpolysilicon are formed on the joint surfaces of the substrates bychemical vapor deposition, these polysilicon films are planarized bychemical mechanical polishing technique, thereafter the substrates arejoined to each other and heat treated to silicidize the polysiliconbetween the electrodes, thereby achieving electrical connection.

In addition, PTL 1 proposes a method in which, for solving the problemin the case where the electrode section is formed into a projectedshape, silicon nitride films are formed on the joint surfaces of thesubstrates, the surfaces of the silicon nitride films are planarized bychemical mechanical polishing technique, thereafter silicon carbonitridefilms are formed, an opening is formed in the electrode section byetching, and copper as the material of the electrode sections isthermally expanded by heat treatment to be joined to each other, therebyachieving electrical connection between the facing electrodes.

CITATION LIST Patent Literature

[PTL 1]

-   Japanese Patent Laid-open No. 2016-174016

SUMMARY Technical Problem

However, in the countermeasure taken against the case where theelectrode section has a projected shape as described in PTL 1, there isa possibility that, at the time of chemical mechanical polishing of thepolysilicon laminated on the electrode section having the projectedshape, the whole area of the joint surface cannot be planarized, and arecess (dishing) would be generated, making the electrical connectiondefective (open). In addition, in the countermeasure taken against thecase where the electrode section has a recessed shape as described inPTL 1, there is a problem that the silicon nitride laminated on theelectrode section having the recessed shape is difficult to be processedby the chemical mechanical polishing technique.

The present technology has been made in consideration of theabove-mentioned circumstances. It is an object of the present technologyto perform electrical connection more securely between electrodesprovided at facing positions in joint surfaces of substrates to bejoined to each other by chip lamination technique.

Solution to Problem

According to one mode of the present technology, there is provided amethod of manufacturing a semiconductor device, the method including: afirst step of embedding electrodes in insulating layers exposed to jointsurfaces of a first substrate and a second substrate; a second step ofsubjecting the joint surfaces of the first substrate and the secondsubstrate to chemical mechanical polishing, to form the electrodes intorecesses recessed as compared to the insulating layers; a third step oflaminating insulating films of a uniform thickness over the entire jointsurfaces; a fourth step of forming an opening by etching in at leastpart of the insulating films covering the electrodes of the firstsubstrate and the second substrate; a fifth step of causing thecorresponding electrodes to face each other and joining the jointsurfaces of the first substrate and the second substrate to each other;and a sixth step of heating the first substrate and the second substratejoined to each other, causing the electrode material to expand andproject through the opening, and joining the corresponding electrodes toeach other.

In addition, according to one mode of the present technology, there isprovided a method of manufacturing a semiconductor device, the methodincluding: a seventh step of embedding electrodes in insulating layersexposed to joint surfaces of a first substrate and a second substrate;an eighth step of subjecting the joint surfaces of the first substrateand the second substrate to chemical mechanical polishing to form theelectrodes into projections projecting from the insulating layers; aninth step of laminating on the joint surface an insulating film insubstantially the same thickness as the projection; a tenth step ofcompletely removing by etching the insulating films covering theelectrodes; and an eleventh step of causing the corresponding electrodesto face each other and joining the joint surfaces of the first substrateand the second substrate to each other.

Besides, according to one mode of the present technology, there isprovided a semiconductor device including: a first substrate; a secondsubstrate to be joined to the first substrate; electrodes embedded atfacing positions in joint surfaces of the first substrate and the secondsubstrate, with an electrode surface of at least one of the firstsubstrate and the second substrate being formed in a recess recessed ascompared to a surrounding insulating layer; and insulating filmslaminated in a uniform thickness along the joint surfaces of the firstsubstrate and the second substrate, and having openings in at least partof portions covering the electrodes, and in which an electrode materialswelling via at least one of the openings is joined to an electrodematerial on the other side.

The above-described methods of manufacturing a semiconductor deviceinclude various modes, such as a mode in which the method is carried outas part of other method, or a mode in which the method is realized as amethod of manufacturing a semiconductor device including meanscorresponding to the steps. In addition, the above-describedsemiconductor device includes various modes such as a mode in which thesemiconductor device is worked in the state of being incorporated inother apparatus, or a mode in which the semiconductor device is workedtogether with other method.

Advantageous Effects of Invention

According to the present technology, it is possible to performelectrical connection more securely between electrodes providedrespectively at facing positions in joint surfaces of substrates to belaminated together by chip lamination technique. Note that the effectsdescribed herein are merely illustrative and not limitative, andadditional effects may be present.

BRIEF DESCRIPTION OF DRAWINGS

FIG. 1 is a figure perspectively depicting a general structure of asemiconductor device.

FIG. 2 is a figure sectionally depicting a general structure of thesemiconductor device.

FIG. 3 is a figure sectionally depicting an electrode joint section of asemiconductor device according to a first embodiment.

FIGS. 4A, 4B, 4C, 4D, and 4E are figures for explaining a method ofmanufacturing a semiconductor device according to the first embodiment.

FIGS. 5A, 5B, 5C, 5D, 5E, and 5F are figures depicting another shape ofthe electrode joint section of the semiconductor device according to thefirst embodiment.

FIG. 6 is a figure sectionally depicting an electrode joint section of asemiconductor device according to a second embodiment.

FIGS. 7A, 7B, 7C, 7D, 7E, and 7F are figures for explaining a method ofmanufacturing the semiconductor device according to the secondembodiment.

FIG. 8 is a figure sectionally depicting an electrode joint section of asemiconductor device according to a third embodiment.

FIG. 9 is a block diagram depicting a schematic configuration of anexample of an imaging device.

FIG. 10 is a figure depicting an example of a schematic configuration ofan endoscopic surgery system.

FIG. 11 is a block diagram depicting an example of a functionalconfiguration of a camera head and a CCU.

FIG. 12 is a block diagram depicting an example of schematicconfiguration of a vehicle control system.

FIG. 13 is a diagram depicting an example of the installation positionof an outside-vehicle information detecting unit and an imaging section.

DESCRIPTION OF EMBODIMENTS

The present technology will be described below in the following order.

-   (A) First Embodiment-   (B) Second Embodiment-   (C) Third Embodiment-   (D) Fourth Embodiment-   (E) Fifth Embodiment-   (F) Sixth Embodiment

(A) First Embodiment

FIG. 1 is a figure perspectively depicting a general structure of asemiconductor device 100 according to the present embodiment, and FIG. 2is a figure sectionally depicting the general structure of thesemiconductor device 100 according to the present embodiment.

The semiconductor device 100 has a configuration in which a jointsurface Su of a first substrate 100 u and a joint surface Sd of a secondsubstrate 100 d are joined to each other by bonding. Electrodes 20 u areembedded in the joint surface Su of the first substrate 100 u, andelectrodes 20 d are embedded in the joint surface Sd of the secondsubstrate 100 d. In the semiconductor device 100, the electrodes 20 u ofthe first substrate 100 u and the electrodes 20 d of the secondsubstrate 100 d that correspond to each other are located to face eachother.

The electrodes 20 u of the first substrate 100 u penetrate in thethickness direction an insulating layer 10 u formed along the jointsurface Su, and are connected to a wiring 30 u provided on the oppositeside of the insulating layer 10 u. Similarly, the electrodes 20 d of thesecond substrate 100 d penetrate in the thickness direction aninsulating layer 10 d formed along the joint surface Sd, and areconnected to a wiring 30 d provided on the opposite side of theinsulating layer 10 d. In a state in which the electrodes 20 u of thefirst substrate 100 u and the electrodes 20 d of the second substrate100 d are joined to each other, the wiring 30 u of the first substrate100 u and the wiring 30 d of the second substrate 100 d are electricallyconnected with each other. Naturally, the electrodes 20 u and 20 d canbe dummy electrodes which are not connected to the wirings.

FIG. 3 is a figure sectionally depicting, in an enlarged form, anelectrode joint section of the semiconductor device 100 according to thepresent embodiment.

The electrode 20 u includes a barrier metal film 20 ua formed such as tocover the inside of a through-hole Hu penetrating the insulating layer10 u in the thickness direction, and a conductive section 20 ub formedby forming a film of an electrode material on the inside of the barriermetal film 20 ua or filling the inside with the electrode material.Similarly, the electrode 20 d includes a barrier metal film 20 da formedin a film shape such as to cover the inside of a through-hole Hdpenetrating the insulating layer 10 d in the thickness direction, and aconductive section 20 db formed by forming a film of an electrodematerial on the inside of the barrier metal film 20 da or filling theinside with the electrode material.

On the joint surface Su side of the first substrate 100 u, theinsulating layer 10 u has a substantially flat surface, the electrode 20u is one step recessed as compared to the insulating layer 10 uconstituting the surrounding structure, and a recess D is provided inthe part of the electrode 20 u. The joint surface Su of the firstsubstrate 100 u is covered with an insulating film 40 u laminated in athin film form in a substantially uniform thickness along the jointsurface Su, and the insulating film 40 u is formed integrally inclusiveof its portion covering a recessed shape of the electrode 20 u. In otherwords, the insulating film 40 u on the joint surface Su side also has arecessed shape at the part of the electrode 20 u.

The insulating film 40 u has an opening 41 u in at least part of itsportion covering the electrode 20 u. As illustrated in FIGS. 5A, 5B, 5C,5D, 5E, and 5F, the opening 41 u may be formed in a partial area of theinsulating film 40 u covering the electrode 20 u, may be formeddispersedly in a plurality of locations of the insulating film 40 ucovering the electrode 20 u, or may be formed in substantially the wholearea of the insulating film 40 u covering the electrode 20 u. FIGS. 5A,5B, 5C, 5D, 5E, and 5F are figures for explaining variations of theshape of the opening or openings in the insulating film 40 u and/or theinsulating film 40 d.

On the joint surface Sd side of the second substrate 100 d, theinsulating layer 10 d has a substantially flat surface, the electrode 20d is one step recessed as compared to the insulating layer 10 dconstituting the surrounding structure, and a recess D is provided inthe part of the electrode 20 d. The joint surface Sd of the secondsubstrate 100 d is covered with an insulating film 40 d laminated in athin film form in a substantially uniform thickness along the jointsurface Sd, and the insulating film 40 d is formed integrally inclusiveof its portion covering a recessed shape of the electrode 20 d. In otherwords, the insulating film 40 d on the joint surface Sd side also has arecessed shape at the part of the electrode 20 d.

The insulating film 40 d has an opening 41 d in at least part of itsportion covering the electrode 20 d. As illustrated in FIGS. 5A, 5B, 5C,5D, 5E, and 5F, the opening 41 d may be formed in a partial area of theinsulating film 40 d covering the electrode 20 d, may be formeddispersedly in a plurality of locations of the insulating film 40 dcovering the electrode 20 d, or may be formed in substantially the wholearea of the insulating film 40 d covering the electrode 20 d.

An area between the first substrate 100 u and the second substrate 200 djoined to each other with the corresponding electrodes 20 u and 20 daligned to face each other is a chamber C surrounded by the recessedshape of the insulating film 40 u and the recessed shape of theinsulating film 40 d. Into the chamber C, swelling portions 21 u and 21d formed by swelling of electrode materials of the electrodes 20 u and20 d through the openings 41 u and 41 d are projecting, and the swellingportions 21 u and 21 d are joined to each other to electrically connectthe electrodes 20 u and 20 d with each other.

FIGS. 4A, 4B, 4C, 4D, and 4E are figures for explaining an example of amethod of manufacturing the semiconductor device 100 according to thepresent embodiment. Note that herein with respect to manufacturing stepswhich are common for the first substrate 100 u and the second substrate100 d, reference signs with an “x” in place of “u” or “d” will be usedin description.

First, an insulating layer 10 x is laminated on a joint surface Sx sideof a substrate 100 x, a through-hole Hx penetrating the insulating layer10 x to a wiring 30 x is formed, a barrier metal film 20 xa is formed inthe through-hole Hx, and an area thereover is filled with an electrodematerial or formed with a film of the electrode material to form aconductive section 20 xb, thereby forming an electrode 20 x penetratingthe insulating layer 10 x (first step). Thereafter, a material of abarrier metal film laminated on a surface of the insulating layer 10 xoutside the through-hole Hx and the electrode material are removed bybeing polished or ground away by chemical mechanical polishing technique(second step). In this instance, depending on the selection of anabrasive or a polishing cloth, the electrode 20 x is over-polished ascompared to the insulating layer 10 x and a recess D generally calleddishing is formed (FIG. 4A).

Next, a thin film of the insulating film 40 x is formed on theinsulating layer 10 x and the recess D of the electrode 20 x (thirdstep). The insulating film 40 x is formed from any of SiCN, SiC and SiO₂or a combination thereof. The insulating film 40 x can be formed by, forexample, an ALD (Atomic Layer deposition) method.

Subsequently, an opening 41 x is formed in the insulating film 40 xformed on the electrode 20 x (fourth step). The opening 41 x is formedby forming a resist in areas other than the opening 41 x by lithographytechnique, removing the opening 41 x part by etching, and thereafterremoving the resist (FIG. 4C).

Next, the joint surfaces Su and Sd of the first substrate 100 u and thesecond substrate 100 d are made to face each other, and the substratesare joined to each other by bonding while aligning the correspondingelectrodes 20 u and 20 d to face each other (FIG. 4D, fifth step). As aresult, the chamber C is formed between the electrodes 20 u and 20 d.

Subsequently, the first substrate 100 u and the second substrate 100 djoined to each other are heat treated such that the electrodes 20 u and20 d are thermally expanded and the respective electrode materials areswelled to project through the openings 41 u and 41 d into the chamberC, to form the swelling portions 21 u and 21 d, and the swellingportions 21 u and 21 d are joined to each other within the chamber Csuch that electrical contact is securely formed between the electrodes20 u and 20 d (sixth step). By the above-mentioned steps, the electrodejoint section of the semiconductor device 100 according to the presentembodiment can be produced.

(B) Second Embodiment

FIG. 6 is a figure sectionally depicting, in an enlarged form, anelectrode joint section of a semiconductor device 200 according to thepresent embodiment. Note that general structure of the semiconductordevice 200 is the same as that of the semiconductor device 100 describedabove with reference to FIGS. 1 and 2 , and, therefore, description willbe omitted.

An electrode 220 u includes a barrier metal film 220 ua formed in a filmshape such as to cover the inside of a through-hole Hu penetrating aninsulating layer 210 u in the thickness direction, and a conductivesection 220 ub formed by forming a film of an electrode material on theinside of the barrier metal film 220 ua or filling the inside with theelectrode material. Similarly, an electrode 220 d includes a barriermetal film 220 da formed in a film shape such as to cover the inside ofa through-hole Hd penetrating an insulating layer 210 d in the thicknessdirection, and a conductive section 220 db formed by forming a film ofan electrode material on the inside of the barrier metal film 220 da orfilling the inside with the electrode material.

On the joint surface Su side of the first substrate 200 u, theinsulating layer 210 u has a substantially flat surface, and is coveredwith an insulating film 240 u laminated in a thin film form in asubstantially uniform thickness along the joint surface Su. Similarly,on the joint surface Sd side of the second substrate 200 d, theinsulating layer 210 d has a substantially flat surface, and is coveredwith an insulating film 240 d laminated in a thin film form in asubstantially uniform thickness along the joint surface Sd. In otherwords, two layers of insulating films including the insulating film 240u and the insulating film 240 d are interposed between the insulatinglayer 210 u of the first substrate 200 u and the insulating layer 210 dof the second substrate 200 d.

The electrode 220 u and the electrode 220 d have their facing surfacesin direct contact with each other. In other words, the insulating films240 u and 240 d are not interposed between the facing portions of thesurfaces of the electrode 220 u and the electrode 220 d.

By the insulating film 240 u and the barrier metal film 220 ua, astructure partitioning between the conductive section 220 ub and theinsulating layer 210 u in a substantially cross-sectional hat shape isformed. Similarly, by the insulating film 240 d and the barrier metalfilm 220 da, a structure partitioning between the conductive section 220db and the insulating layer 210 d in a substantially cross-sectional hatshape is formed.

The structure formed by the insulating film 240 u and the barrier metalfilm 220 ua to partition between the conductive section 220 ub and theinsulating layer 210 u in a substantially cross-sectional hat shape andthe structure formed by the insulating film 240 d and the barrier metalfilm 220 da to partition between the conductive section 220 db and theinsulating layer 210 d in a substantially cross-sectional hat shape areformed in a close contact state, with the hat recess portions facingeach other. For this reason, even in the case where the first substrate200 u and the second substrate 200 d are joined to each other by bondingin a state where the electrode 220 u and the electrode 220 d arepositionally deviated from each other, there is no possibility for theconductive section 220 ub to come into contact with the insulating layer210 d or for the conductive section 220 db to come into contact with theinsulating layer 210 u.

FIGS. 7A, 7B, 7C, 7D, 7E, and 7F are figures for explaining an exampleof a method of manufacturing the semiconductor device 200 according tothe present embodiment. Note that hereinafter with respect to themanufacturing steps which are common for the first substrate 200 u andthe second substrate 200 d, reference signs with an “x” in place of “u”or “d” will be used in description.

First, an insulating layer 210 x is laminated on a joint surface S sideof the substrate 200 x, a through-hole Hx penetrating the insulatinglayer 210 x to a wiring 230 x is formed, a barrier metal film 220 xa isformed in the through-hole Hx, and an area thereover is filled with anelectrode material or formed with a film of the electrode material toform a conductive section 220 xb, thereby forming an electrode 220 xpenetrating the insulating layer 210 x (seventh step). Thereafter, amaterial of a barrier metal film laminated on a surface of theinsulating layer 210 x outside the through-hole Hx and the electrodematerial are removed by being polished or grounded away by chemicalmechanical polishing technique. In this instance, depending on theselection of the abrasive and polishing cloth, the degree of polishingof the electrode 220 x is lowered as compared to that of the insulatinglayer 210 x and a projection B is formed (FIG. 7A, eighth step).

Next, a thin film of an insulating film 240 x is formed on theinsulating layer 210 x and the projection B of the electrode 220 x(ninth step). The insulating film 240 x is formed from any of SiCN, SiCand SiO₂ or a combination thereof. The thickness of the insulating film240 x is on the order of the projection amount of the projection B (theamount corresponding to a step between the projection B and theinsulating layer 210 x). The insulating layer 240 x can be formed by,for example, an ALD (Atomic Layer deposition) method.

Subsequently, the insulating film 240 x formed on the electrode 220 x isremoved (tenth step). The removal of the insulating film 240 x isperformed by forming a resist R in an area other than the electrode 220x by lithography technique, removing the insulating film 240 x on theelectrode 220 x by etching, and thereafter removing the resist R (FIGS.7C, 7D, and 7E).

Next, the joint surfaces Su and Sd of the first substrate 200 u and thesecond substrate 200 d are made to face each other, and the substratesare joined to each other by bonding while aligning the correspondingelectrodes 220 u and 220 d to face each other (FIG. 7F, eleventh step).Then, the first substrate 200 u and the second substrate 200 d joined toeach other are heat treated and the electrodes 220 u and 220 d areelectrically connected with each other securely. By the above-mentionedsteps, the electrode joint section of the semiconductor device 200according to the present embodiment can be produced.

(C) Third Embodiment

FIG. 8 is a figure sectionally depicting, in an enlarged form, anelectrode joint section of a semiconductor device 300 according to thepresent embodiment. Note that a general structure of the semiconductordevice 300 is the same as that of the semiconductor device 100 describedabove with reference to FIGS. 1 and 2 , and, therefore, description willbe omitted. In addition, since the semiconductor device 300 has astructure in which one of the substrates of the semiconductor device 100and one of the substrates of the semiconductor device 200 are joined toeach other, parts are denoted by the reference signs used in theabove-mentioned embodiments, and detailed descriptions will be omitted.

The semiconductor device 300 according to the present embodiment has astructure in which a substrate on one side of the substrates to bejoined to each other by bonding has a recess D, and a substrate on theother side has a projection B. The substrate having the recess D isproduced by a producing method the same as or similar to that in thefirst embodiment, and the substrate having the projection B is producedby a producing method the same as or similar to that in the secondembodiment. When these substrates are bonded to each other, a chamber Cwhich is substantially half of that in the first embodiment is formed onthe recess D side.

Thereafter, a heat treatment is conducted such that the electrodes 20and 220 are thermally expanded, the electrode 20 expands and projectsvia the opening 41, whereas the electrode 220 expands and projects as awhole, to form swelling portions 21 and 221, and these swelling portions21 and 221 are joined to each other within the chamber C such thatelectrical contact is securely formed between the electrodes 20 u and 20d. By the above-mentioned steps, the electrode joint section of thesemiconductor device 300 according to the present embodiment can beproduced.

(D) Fourth Embodiment

FIG. 9 is a block diagram depicting a schematic configuration of anexample of an imaging apparatus 800 as an example of an electronicapparatus on which the semiconductor device according to the aboveembodiments is mounted. The imaging apparatus 800 is a digital stillcamera, a digital video camera, a mobile phone equipped with a camera,or the like.

The imaging apparatus 800 includes a module 900, a camera signalprocessing section 810, an image processing section 820, a displaysection 830, a reader/writer 840, an arithmetic processing section 850,an operation input section 860, and a lens drive control section 870.

The module 900 is a component in charge of performing an imagingfunction, and includes an optical system 930 including a lens 911 as animaging lens, and an imaging element 940 such as CCD (Charge CoupledDevices) and CMOS (Complementary Metal Oxide Semiconductor). Thisimaging element 940 corresponds to the solid-state imaging elementaccording to the above embodiments. The imaging element 940 converts anoptical image formed by the optical system 930 into an electricalsignal, and outputs an imaging signal (image signal) according to theoptical image.

The camera signal processing section 810 applies various kinds of signalprocessing such as analog-to-digital conversion, noise removal, imagequality correction, and conversion to luminance and color differencesignals to the image signal outputted by the imaging element 940.

The image processing section 820 performs recording and reproductionprocessing of the image signal, and performs compression encoding andexpansion decoding processing of the image signal based on apredetermined image data format, conversion processing of dataspecification such as resolution, and so on.

The display section 830 has a function of displaying a display accordingto operation inputs to the operation input section 860 and various kindsof data such as a picked-up image.

The reader/writer 840 performs writing of data onto an external storagemedium such as a memory card and reading of data from the externalstorage medium; for example, the reader/writer 840 writes image dataobtained through encoding by the image processing section 820 onto anexternal storage medium, and reads image data stored in an externalstorage medium and outputs the image data to the image processingsection 820.

The arithmetic processing section 850 is a component that functions as acontrol section controlling each circuit block of the imaging apparatus800, and controls each circuit block based on, for example, operationinput signals from the operation input section 860. Based on a controlsignal from the arithmetic processing section 850, a driving driver ofthe module 900 controls, for example, a drive motor for driving a lenscircle.

The operation input section 860 includes switches or a touch panel orthe like for a user to perform a required operation therewith; forexample, it includes such elements as a shutter release operationelement for performing a shutter operation or a selection operationelement for selecting an operation mode, and outputs an operation inputsignal to the arithmetic processing section 850 according to theoperation inputs by the user.

(E) Example of Application to Endoscopic Surgery System

The technology according to the present disclosure (present technology)is applicable to various products. For example, the technology accordingto the present disclosure may be applied to an endoscopic surgerysystem.

FIG. 10 is a view depicting an example of a schematic configuration ofan endoscopic surgery system to which the technology according to anembodiment of the present disclosure (present technology) can beapplied.

In FIG. 10 , a state is illustrated in which a surgeon (medical doctor)11131 is using an endoscopic surgery system 11000 to perform surgery fora patient 11132 on a patient bed 11133. As depicted, the endoscopicsurgery system 11000 includes an endoscope 11100, other surgical tools11110 such as a pneumoperitoneum tube 11111 and an energy device 11112,a supporting arm apparatus 11120 which supports the endoscope 11100thereon, and a cart 11200 on which various apparatus for endoscopicsurgery are mounted.

The endoscope 11100 includes a lens barrel 11101 having a region of apredetermined length from a distal end thereof to be inserted into abody cavity of the patient 11132, and a camera head 11102 connected to aproximal end of the lens barrel 11101. In the example depicted, theendoscope 11100 is depicted which includes as a rigid endoscope havingthe lens barrel 11101 of the hard type. However, the endoscope 11100 mayotherwise be included as a flexible endoscope having the lens barrel11101 of the flexible type.

The lens barrel 11101 has, at a distal end thereof, an opening in whichan objective lens is fitted. A light source apparatus 11203 is connectedto the endoscope 11100 such that light generated by the light sourceapparatus 11203 is introduced to a distal end of the lens barrel 11101by a light guide extending in the inside of the lens barrel 11101 and isirradiated toward an observation target in a body cavity of the patient11132 through the objective lens. It is to be noted that the endoscope11100 may be a forward-viewing endoscope or may be an oblique-viewingendoscope or a side-viewing endoscope.

An optical system and an image pickup element are provided in the insideof the camera head 11102 such that reflected light (observation light)from the observation target is condensed on the image pickup element bythe optical system. The observation light is photo-electricallyconverted by the image pickup element to generate an electric signalcorresponding to the observation light, namely, an image signalcorresponding to an observation image. The image signal is transmittedas RAW data to a CCU 11201.

The CCU 11201 includes a central processing unit (CPU), a graphicsprocessing unit (GPU) or the like and integrally controls operation ofthe endoscope 11100 and a display apparatus 11202. Further, the CCU11201 receives an image signal from the camera head 11102 and performs,for the image signal, various image processes for displaying an imagebased on the image signal such as, for example, a development process(demosaic process).

The display apparatus 11202 displays thereon an image based on an imagesignal, for which the image processes have been performed by the CCU11201, under the control of the CCU 11201.

The light source apparatus 11203 includes a light source such as, forexample, a light emitting diode (LED) and supplies irradiation lightupon imaging of a surgical region to the endoscope 11100.

An inputting apparatus 11204 is an input interface for the endoscopicsurgery system 11000. A user can perform inputting of various kinds ofinformation or instruction inputting to the endoscopic surgery system11000 through the inputting apparatus 11204. For example, the user wouldinput an instruction or a like to change an image pickup condition (typeof irradiation light, magnification, focal distance or the like) by theendoscope 11100.

A treatment tool controlling apparatus 11205 controls driving of theenergy device 11112 for cautery or incision of a tissue, sealing of ablood vessel or the like. A pneumoperitoneum apparatus 11206 feeds gasinto a body cavity of the patient 11132 through the pneumoperitoneumtube 11111 to inflate the body cavity in order to secure the field ofview of the endoscope 11100 and secure the working space for thesurgeon. A recorder 11207 is an apparatus capable of recording variouskinds of information relating to surgery. A printer 11208 is anapparatus capable of printing various kinds of information relating tosurgery in various forms such as a text, an image or a graph.

It is to be noted that the light source apparatus 11203 which suppliesirradiation light when a surgical region is to be imaged to theendoscope 11100 may include a white light source which includes, forexample, an LED, a laser light source or a combination of them. Where awhite light source includes a combination of red, green, and blue (RGB)laser light sources, since the output intensity and the output timingcan be controlled with a high degree of accuracy for each color (eachwavelength), adjustment of the white balance of a picked up image can beperformed by the light source apparatus 11203. Further, in this case, iflaser beams from the respective RGB laser light sources are irradiatedtime-divisionally on an observation target and driving of the imagepickup elements of the camera head 11102 are controlled in synchronismwith the irradiation timings. Then images individually corresponding tothe R, G and B colors can be also picked up time-divisionally. Accordingto this method, a color image can be obtained even if color filters arenot provided for the image pickup element.

Further, the light source apparatus 11203 may be controlled such thatthe intensity of light to be outputted is changed for each predeterminedtime. By controlling driving of the image pickup element of the camerahead 11102 in synchronism with the timing of the change of the intensityof light to acquire images time-divisionally and synthesizing theimages, an image of a high dynamic range free from underexposed blockedup shadows and overexposed highlights can be created.

Further, the light source apparatus 11203 may be configured to supplylight of a predetermined wavelength band ready for special lightobservation. In special light observation, for example, by utilizing thewavelength dependency of absorption of light in a body tissue toirradiate light of a narrow band in comparison with irradiation lightupon ordinary observation (namely, white light), narrow band observation(narrow band imaging) of imaging a predetermined tissue such as a bloodvessel of a superficial portion of the mucous membrane or the like in ahigh contrast is performed. Alternatively, in special light observation,fluorescent observation for obtaining an image from fluorescent lightgenerated by irradiation of excitation light may be performed. Influorescent observation, it is possible to perform observation offluorescent light from a body tissue by irradiating excitation light onthe body tissue (autofluorescence observation) or to obtain afluorescent light image by locally injecting a reagent such asindocyanine green (ICG) into a body tissue and irradiating excitationlight corresponding to a fluorescent light wavelength of the reagentupon the body tissue. The light source apparatus 11203 can be configuredto supply such narrow-band light and/or excitation light suitable forspecial light observation as described above.

FIG. 11 is a block diagram depicting an example of a functionalconfiguration of the camera head 11102 and the CCU 11201 depicted inFIG. 10 .

The camera head 11102 includes a lens unit 11401, an image pickup unit11402, a driving unit 11403, a communication unit 11404 and a camerahead controlling unit 11405. The CCU 11201 includes a communication unit11411, an image processing unit 11412 and a control unit 11413. Thecamera head 11102 and the CCU 11201 are connected for communication toeach other by a transmission cable 11400.

The lens unit 11401 is an optical system, provided at a connectinglocation to the lens barrel 11101. Observation light taken in from adistal end of the lens barrel 11101 is guided to the camera head 11102and introduced into the lens unit 11401. The lens unit 11401 includes acombination of a plurality of lenses including a zoom lens and afocusing lens.

The number of image pickup elements which is included by the imagepickup unit 11402 may be one (single-plate type) or a plural number(multi-plate type). Where the image pickup unit 11402 is configured asthat of the multi-plate type, for example, image signals correspondingto respective R, G and B are generated by the image pickup elements, andthe image signals may be synthesized to obtain a color image. The imagepickup unit 11402 may also be configured so as to have a pair of imagepickup elements for acquiring respective image signals for the right eyeand the left eye ready for three dimensional (3D) display. If 3D displayis performed, then the depth of a living body tissue in a surgicalregion can be comprehended more accurately by the surgeon 11131. It isto be noted that, where the image pickup unit 11402 is configured asthat of stereoscopic type, a plurality of systems of lens units 11401are provided corresponding to the individual image pickup elements.

Further, the image pickup unit 11402 may not necessarily be provided onthe camera head 11102. For example, the image pickup unit 11402 may beprovided immediately behind the objective lens in the inside of the lensbarrel 11101.

The driving unit 11403 includes an actuator and moves the zoom lens andthe focusing lens of the lens unit 11401 by a predetermined distancealong an optical axis under the control of the camera head controllingunit 11405. Consequently, the magnification and the focal point of apicked up image by the image pickup unit 11402 can be adjusted suitably.

The communication unit 11404 includes a communication apparatus fortransmitting and receiving various kinds of information to and from theCCU 11201. The communication unit 11404 transmits an image signalacquired from the image pickup unit 11402 as RAW data to the CCU 11201through the transmission cable 11400.

In addition, the communication unit 11404 receives a control signal forcontrolling driving of the camera head 11102 from the CCU 11201 andsupplies the control signal to the camera head controlling unit 11405.The control signal includes information relating to image pickupconditions such as, for example, information that a frame rate of apicked up image is designated, information that an exposure value uponimage picking up is designated and/or information that a magnificationand a focal point of a picked up image are designated.

It is to be noted that the image pickup conditions such as the framerate, exposure value, magnification or focal point may be designated bythe user or may be set automatically by the control unit 11413 of theCCU 11201 on the basis of an acquired image signal. In the latter case,an auto exposure (AE) function, an auto focus (AF) function and an autowhite balance (AWB) function are incorporated in the endoscope 11100.

The camera head controlling unit 11405 controls driving of the camerahead 11102 on the basis of a control signal from the CCU 11201 receivedthrough the communication unit 11404.

The communication unit 11411 includes a communication apparatus fortransmitting and receiving various kinds of information to and from thecamera head 11102. The communication unit 11411 receives an image signaltransmitted thereto from the camera head 11102 through the transmissioncable 11400.

Further, the communication unit 11411 transmits a control signal forcontrolling driving of the camera head 11102 to the camera head 11102.The image signal and the control signal can be transmitted by electricalcommunication, optical communication or the like.

The image processing unit 11412 performs various image processes for animage signal in the form of RAW data transmitted thereto from the camerahead 11102.

The control unit 11413 performs various kinds of control relating toimage picking up of a surgical region or the like by the endoscope 11100and display of a picked up image obtained by image picking up of thesurgical region or the like. For example, the control unit 11413 createsa control signal for controlling driving of the camera head 11102.

Further, the control unit 11413 controls, on the basis of an imagesignal for which image processes have been performed by the imageprocessing unit 11412, the display apparatus 11202 to display a pickedup image in which the surgical region or the like is imaged. Thereupon,the control unit 11413 may recognize various objects in the picked upimage using various image recognition technologies. For example, thecontrol unit 11413 can recognize a surgical tool such as forceps, aparticular living body region, bleeding, mist when the energy device11112 is used and so forth by detecting the shape, color and so forth ofedges of objects included in a picked up image. The control unit 11413may cause, when it controls the display apparatus 11202 to display apicked up image, various kinds of surgery supporting information to bedisplayed in an overlapping manner with an image of the surgical regionusing a result of the recognition. Where surgery supporting informationis displayed in an overlapping manner and presented to the surgeon11131, the burden on the surgeon 11131 can be reduced and the surgeon11131 can proceed with the surgery with certainty.

The transmission cable 11400 which connects the camera head 11102 andthe CCU 11201 to each other is an electric signal cable ready forcommunication of an electric signal, an optical fiber ready for opticalcommunication or a composite cable ready for both of electrical andoptical communications.

Here, while, in the example depicted, communication is performed bywired communication using the transmission cable 11400, thecommunication between the camera head 11102 and the CCU 11201 may beperformed by wireless communication.

An example of the endoscopic surgery system to which the technologyaccording to the present disclosure is applicable has been describedabove. The technology according to the present disclosure is applicable,for example, to the endoscope 11100, the camera head 11102 (the imagepickup unit 11402 thereof), the CCU 11201 (the image processing unit11412 thereof) and the like, among the above-described configurations.

Note that the endoscopic surgery system has been described as an examplehere and the technology according to the present disclosure may beapplied to other systems, such as a microscopic surgery system, forexample.

(F) Example of Application to Moving Body

The technology according to the present disclosure (present technology)is applicable to various products. For example, the technology accordingto the present disclosure may be realized as a device to be mounted onany type of moving body such as an automobile, electric vehicle, hybridelectric vehicle, motorcycle, bicycle, personal mobility, airplane,drone, ship, and robot.

FIG. 12 is a block diagram depicting an example of schematicconfiguration of a vehicle control system as an example of a mobile bodycontrol system to which the technology according to an embodiment of thepresent disclosure can be applied.

The vehicle control system 12000 includes a plurality of electroniccontrol units connected to each other via a communication network 12001.In the example depicted in FIG. 12 , the vehicle control system 12000includes a driving system control unit 12010, a body system control unit12020, an outside-vehicle information detecting unit 12030, anin-vehicle information detecting unit 12040, and an integrated controlunit 12050. In addition, a microcomputer 12051, a sound/image outputsection 12052, and a vehicle-mounted network interface (I/F) 12053 areillustrated as a functional configuration of the integrated control unit12050.

The driving system control unit 12010 controls the operation of devicesrelated to the driving system of the vehicle in accordance with variouskinds of programs. For example, the driving system control unit 12010functions as a control device for a driving force generating device forgenerating the driving force of the vehicle, such as an internalcombustion engine, a driving motor, or the like, a driving forcetransmitting mechanism for transmitting the driving force to wheels, asteering mechanism for adjusting the steering angle of the vehicle, abraking device for generating the braking force of the vehicle, and thelike.

The body system control unit 12020 controls the operation of variouskinds of devices provided to a vehicle body in accordance with variouskinds of programs. For example, the body system control unit 12020functions as a control device for a keyless entry system, a smart keysystem, a power window device, or various kinds of lamps such as aheadlamp, a backup lamp, a brake lamp, a turn signal, a fog lamp, or thelike. In this case, radio waves transmitted from a mobile device as analternative to a key or signals of various kinds of switches can beinput to the body system control unit 12020. The body system controlunit 12020 receives these input radio waves or signals, and controls adoor lock device, the power window device, the lamps, or the like of thevehicle.

The outside-vehicle information detecting unit 12030 detects informationabout the outside of the vehicle including the vehicle control system12000. For example, the outside-vehicle information detecting unit 12030is connected with an imaging section 12031. The outside-vehicleinformation detecting unit 12030 makes the imaging section 12031 imagean image of the outside of the vehicle, and receives the imaged image.On the basis of the received image, the outside-vehicle informationdetecting unit 12030 may perform processing of detecting an object suchas a human, a vehicle, an obstacle, a sign, a character on a roadsurface, or the like, or processing of detecting a distance thereto.

The imaging section 12031 is an optical sensor that receives light, andwhich outputs an electric signal corresponding to a received lightamount of the light. The imaging section 12031 can output the electricsignal as an image, or can output the electric signal as informationabout a measured distance. In addition, the light received by theimaging section 12031 may be visible light, or may be invisible lightsuch as infrared rays or the like.

The in-vehicle information detecting unit 12040 detects informationabout the inside of the vehicle. The in-vehicle information detectingunit 12040 is, for example, connected with a driver state detectingsection 12041 that detects the state of a driver. The driver statedetecting section 12041, for example, includes a camera that images thedriver. On the basis of detection information input from the driverstate detecting section 12041, the in-vehicle information detecting unit12040 may calculate a degree of fatigue of the driver or a degree ofconcentration of the driver, or may determine whether the driver isdozing.

The microcomputer 12051 can calculate a control target value for thedriving force generating device, the steering mechanism, or the brakingdevice on the basis of the information about the inside or outside ofthe vehicle which information is obtained by the outside-vehicleinformation detecting unit 12030 or the in-vehicle information detectingunit 12040, and output a control command to the driving system controlunit 12010. For example, the microcomputer 12051 can perform cooperativecontrol intended to implement functions of an advanced driver assistancesystem (ADAS) which functions include collision avoidance or shockmitigation for the vehicle, following driving based on a followingdistance, vehicle speed maintaining driving, a warning of collision ofthe vehicle, a warning of deviation of the vehicle from a lane, or thelike.

In addition, the microcomputer 12051 can perform cooperative controlintended for automatic driving, which makes the vehicle to travelautonomously without depending on the operation of the driver, or thelike, by controlling the driving force generating device, the steeringmechanism, the braking device, or the like on the basis of theinformation about the outside or inside of the vehicle which informationis obtained by the outside-vehicle information detecting unit 12030 orthe in-vehicle information detecting unit 12040.

In addition, the microcomputer 12051 can output a control command to thebody system control unit 12020 on the basis of the information about theoutside of the vehicle which information is obtained by theoutside-vehicle information detecting unit 12030. For example, themicrocomputer 12051 can perform cooperative control intended to preventa glare by controlling the headlamp so as to change from a high beam toa low beam, for example, in accordance with the position of a precedingvehicle or an oncoming vehicle detected by the outside-vehicleinformation detecting unit 12030.

The sound/image output section 12052 transmits an output signal of atleast one of a sound and an image to an output device capable ofvisually or auditorily notifying information to an occupant of thevehicle or the outside of the vehicle. In the example of FIG. 12 , anaudio speaker 12061, a display section 12062, and an instrument panel12063 are illustrated as the output device. The display section 12062may, for example, include at least one of an on-board display and ahead-up display. FIG. 13 is a diagram depicting an example of theinstallation position of the imaging section 12031.

In FIG. 13 , the imaging section 12031 includes imaging sections 12101,12102, 12103, 12104, and 12105.

The imaging sections 12101, 12102, 12103, 12104, and 12105 are, forexample, disposed at positions on a front nose, sideview mirrors, a rearbumper, and a back door of the vehicle 12100 as well as a position on anupper portion of a windshield within the interior of the vehicle. Theimaging section 12101 provided to the front nose and the imaging section12105 provided to the upper portion of the windshield within theinterior of the vehicle obtain mainly an image of the front of thevehicle 12100. The imaging sections 12102 and 12103 provided to thesideview mirrors obtain mainly an image of the sides of the vehicle12100. The imaging section 12104 provided to the rear bumper or the backdoor obtains mainly an image of the rear of the vehicle 12100. Theimaging section 12105 provided to the upper portion of the windshieldwithin the interior of the vehicle is used mainly to detect a precedingvehicle, a pedestrian, an obstacle, a signal, a traffic sign, a lane, orthe like.

Incidentally, FIG. 13 depicts an example of photographing ranges of theimaging sections 12101 to 12104. An imaging range 12111 represents theimaging range of the imaging section 12101 provided to the front nose.Imaging ranges 12112 and 12113 respectively represent the imaging rangesof the imaging sections 12102 and 12103 provided to the sideviewmirrors. An imaging range 12114 represents the imaging range of theimaging section 12104 provided to the rear bumper or the back door. Abird's-eye image of the vehicle 12100 as viewed from above is obtainedby superimposing image data imaged by the imaging sections 12101 to12104, for example.

At least one of the imaging sections 12101 to 12104 may have a functionof obtaining distance information. For example, at least one of theimaging sections 12101 to 12104 may be a stereo camera constituted of aplurality of imaging elements, or may be an imaging element havingpixels for phase difference detection.

For example, the microcomputer 12051 can determine a distance to eachthree-dimensional object within the imaging ranges 12111 to 12114 and atemporal change in the distance (relative speed with respect to thevehicle 12100) on the basis of the distance information obtained fromthe imaging sections 12101 to 12104, and thereby extract, as a precedingvehicle, a nearest three-dimensional object in particular that ispresent on a traveling path of the vehicle 12100 and which travels insubstantially the same direction as the vehicle 12100 at a predeterminedspeed (for example, equal to or more than 0 km/hour). Further, themicrocomputer 12051 can set a following distance to be maintained infront of a preceding vehicle in advance, and perform automatic brakecontrol (including following stop control), automatic accelerationcontrol (including following start control), or the like. It is thuspossible to perform cooperative control intended for automatic drivingthat makes the vehicle travel autonomously without depending on theoperation of the driver or the like.

For example, the microcomputer 12051 can classify three-dimensionalobject data on three-dimensional objects into three-dimensional objectdata of a two-wheeled vehicle, a standard-sized vehicle, a large-sizedvehicle, a pedestrian, a utility pole, and other three-dimensionalobjects on the basis of the distance information obtained from theimaging sections 12101 to 12104, extract the classifiedthree-dimensional object data, and use the extracted three-dimensionalobject data for automatic avoidance of an obstacle. For example, themicrocomputer 12051 identifies obstacles around the vehicle 12100 asobstacles that the driver of the vehicle 12100 can recognize visuallyand obstacles that are difficult for the driver of the vehicle 12100 torecognize visually. Then, the microcomputer 12051 determines a collisionrisk indicating a risk of collision with each obstacle. In a situationin which the collision risk is equal to or higher than a set value andthere is thus a possibility of collision, the microcomputer 12051outputs a warning to the driver via the audio speaker 12061 or thedisplay section 12062, and performs forced deceleration or avoidancesteering via the driving system control unit 12010. The microcomputer12051 can thereby assist in driving to avoid collision.

At least one of the imaging sections 12101 to 12104 may be an infraredcamera that detects infrared rays. The microcomputer 12051 can, forexample, recognize a pedestrian by determining whether or not there is apedestrian in imaged images of the imaging sections 12101 to 12104. Suchrecognition of a pedestrian is, for example, performed by a procedure ofextracting characteristic points in the imaged images of the imagingsections 12101 to 12104 as infrared cameras and a procedure ofdetermining whether or not it is the pedestrian by performing patternmatching processing on a series of characteristic points representingthe contour of the object. When the microcomputer 12051 determines thatthere is a pedestrian in the imaged images of the imaging sections 12101to 12104, and thus recognizes the pedestrian, the sound/image outputsection 12052 controls the display section 12062 so that a squarecontour line for emphasis is displayed so as to be superimposed on therecognized pedestrian. The sound/image output section 12052 may alsocontrol the display section 12062 so that an icon or the likerepresenting the pedestrian is displayed at a desired position.

An example of the vehicle control system to which the technologyaccording to the present disclosure is applicable has been describedhereinabove. The technology according to the present disclosure isapplicable, for example, to the imaging section 12031, among theabove-described configurations.

Note that the present technology is not limited to the aforementionedembodiments and includes configurations obtained by mutually replacingor modifying the combination of the configurations disclosed in theabove embodiments, configurations obtained by mutually replacing ormodifying the combination of the configurations disclosed in thepublicly known art and the above embodiments, and so on. In addition,the technical scope of the present technology is not limited to theabove embodiments and includes the matters described in the claims andequivalents thereof. Besides, the present technology can take thefollowing configurations.

1

A method of manufacturing a semiconductor device, the method including:

a first step of embedding electrodes in insulating layers exposed tojoint surfaces of a first substrate and a second substrate;

a second step of subjecting the joint surfaces of the first substrateand the second substrate to chemical mechanical polishing, to form theelectrodes into recesses recessed as compared to the insulating layers;

a third step of laminating insulating films of a uniform thickness overthe entire joint surfaces;

a fourth step of forming an opening by etching in at least part of theinsulating films covering the electrodes of the first substrate and thesecond substrate;

a fifth step of causing the corresponding electrodes to face each otherand joining the joint surfaces of the first substrate and the secondsubstrate to each other; and

a sixth step of heating the first substrate and the second substratejoined to each other, causing the electrode material to expand andproject through the opening, and joining the corresponding electrodes toeach other.

2

The method of manufacturing the semiconductor device according to (1)above, in which

in the fourth step, the openings are formed in a plurality of locationsof the insulating film covering the electrode.

3

The method of manufacturing the semiconductor device according to (1)above, in which

in the fourth step, the openings are formed in substantially the entireinsulating film covering the electrode.

4

The method of manufacturing the semiconductor device according to (1)above, in which

in the fourth step, the openings are formed in substantially the entireinsulating film covering the electrode of the first substrate, and theopening is formed in a partial area of the insulating film covering theelectrode of the second substrate.

5

A method of manufacturing a semiconductor device, the method including:

a seventh step of embedding electrodes in insulating layers exposed tojoint surfaces of a first substrate and a second substrate;

an eighth step of subjecting the joint surfaces of the first substrateand the second substrate to chemical mechanical polishing to form theelectrodes into projections projecting from the insulating layers;

a ninth step of laminating on the joint surface an insulating film insubstantially the same thickness as the projection;

a tenth step of completely removing by etching the insulating filmscovering the electrodes; and

an eleventh step of causing the corresponding electrodes to face eachother and joining the joint surfaces of the first substrate and thesecond substrate to each other.

6

A semiconductor device including:

a first substrate;

a second substrate to be joined to the first substrate;

electrodes embedded at facing positions in joint surfaces of the firstsubstrate and the second substrate, with an electrode surface of atleast one of the first substrate and the second substrate being formedin a recess more recessed as compared to a surrounding insulating layer;and

insulating films laminated in a uniform thickness along the jointsurfaces of the first substrate and the second substrate, and havingopenings in at least part of portions covering the electrodes, in which

an electrode material swelling via at least one of the openings isjoined to an electrode material on the other side.

REFERENCE SIGNS LIST

10 x, 10 d, 10 u Insulating layer, 20 x, 20 d, 20 u Electrode, 20 a, 20d, 20 ua Barrier metal film, 20 b, 20 db, 20 ub section, 21 x, 21 d, 21u Swelling portion, 30 x, 30 d, 30 u Wiring, 40 x, 40 d, 40 u Insulatingfilm, 41 x, 41 d, 41 u Opening, 100 Semiconductor device, 100 d Secondsubstrate, 100 u First substrate, 200 Semiconductor device, 200 xSubstrate, 200 d Second substrate, 200 u First substrate, 210 x, 210 d,210 u Insulating layer, 220 x, 220 d, 220 u Electrode, 220 a, 220 da,220 ua Barrier metal film, 220 b, 220 db, 220 ub Conductive section, 221Swelling portion, 230 Wiring, 240 x, 240 d, 240 u Insulating film, 300Semiconductor device, B Projection, C Chamber, D Recess, H, Hd, HuThrough-hole, S, Sd, Su Joint surface

The invention claimed is:
 1. A semiconductor device, comprising: a firstsubstrate; a second substrate; a first insulating layer; a secondinsulating layer, wherein a first portion of the first insulating layeris in contact with a first portion of the second insulating layer; afirst electrode; a second electrode, wherein a first portion of thefirst electrode is in contact with a first portion of the secondelectrode; a first recess between a second portion of the firstelectrode and a second portion of the second electrode; and a firstbarrier metal film, wherein the first recess is between the firstbarrier metal film and the first portion of the first electrode.
 2. Thesemiconductor device according to claim 1, wherein the first recess isbetween a second portion of the first insulating layer and the firstportion of the first electrode.
 3. The semiconductor device according toclaim 1, wherein the first recess is between a second portion of thesecond insulating layer and the first portion of the second electrode.4. The semiconductor device according to claim 1, further comprising asecond barrier metal film.
 5. The semiconductor device according toclaim 4, wherein the first recess is between the second barrier metalfilm and the first portion of the second electrode.
 6. The semiconductordevice according to claim 1, wherein the first recess is between asecond portion of the first insulating layer and a second portion of thesecond insulating layer.
 7. The semiconductor device according to claim1, further comprising a second recess, wherein the first portion of thefirst electrode is between the first recess and the second recess in across-section view of the semiconductor device.
 8. The semiconductordevice according to claim 1, wherein the first insulating layer includesa first insulating film and a second insulating film, the first portionof the first insulating layer includes a first portion of the firstinsulating film, and a second portion of the first insulating layerincludes a second portion of the first insulating film and a firstportion of the second insulating film.
 9. The semiconductor deviceaccording to claim 8, wherein the first insulating film is on a jointsurface of the first substrate, the second insulating film is on a jointsurface of the second substrate, and the joint surface of the firstsubstrate is in contact with the joint surface of the second substrate.10. The semiconductor device according to claim 8, wherein the secondinsulating layer includes a third insulating film and a fourthinsulating film, the first portion of the second insulating layerincludes a first portion of the third insulating film, and a secondportion of the second insulating layer includes a second portion of thethird insulating film and a first portion of the fourth insulating film.11. The semiconductor device according to claim 1, wherein an electrodematerial in the first electrode is in contact with an electrode materialin the second electrode.
 12. The semiconductor device according to claim1, wherein the first insulating layer includes a first insulating filmand a second insulating film, the first insulating film includes a firstopening, and an area of the second insulating film includes the firstelectrode.
 13. The semiconductor device according to claim 1, whereinthe first insulating layer includes a first insulating film and a secondinsulating film, the second insulating film includes a second opening,and an area of the second insulating film includes the second electrode.14. A semiconductor device, comprising: a first substrate; a secondsubstrate; a first insulating layer; a second insulating layer, whereina first portion of the first insulating layer is in contact with a firstportion of the second insulating layer; a first electrode; a secondelectrode, wherein a first portion of the first electrode is in contactwith a first portion of the second electrode; a recess between a secondportion of the first electrode and a second portion of the secondelectrode; a first barrier metal film; and a second barrier metal film,wherein the recess is between the second barrier metal film and thefirst portion of the second electrode.
 15. A semiconductor device,comprising: a first substrate; a second substrate; a first insulatinglayer; a second insulating layer, wherein a first portion of the firstinsulating layer is in contact with a first portion of the secondinsulating layer; a first electrode; a second electrode, wherein a firstportion of the first electrode is in contact with a first portion of thesecond electrode; a first recess between a second portion of the firstelectrode and a second portion of the second electrode; and a secondrecess, wherein the first portion of the first electrode is between thefirst recess and the second recess in a cross-section view of thesemiconductor device.
 16. A semiconductor device, comprising: a firstsubstrate; a second substrate; a first insulating layer; a secondinsulating layer, wherein a first portion of the first insulating layeris in contact with a first portion of the second insulating layer; afirst electrode, wherein the first insulating layer includes a firstinsulating film and a second insulating film, the first portion of thefirst insulating layer includes a first portion of the first insulatingfilm, and a second portion of the first insulating layer includes asecond portion of the first insulating film and a first portion of thesecond insulating film; a second electrode, wherein a first portion ofthe first electrode is in contact with a first portion of the secondelectrode; and a recess between a second portion of the first electrodeand a second portion of the second electrode.